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EL357 - Photocoupler

General Description

The EL357 contains a gallium arsenic infrared emitting diode optically coupled to a phototransistor.

Hybrid substrates that require high density mounting Programmable controllers System appliances, measuring instrument

Key Features

  • Current transfer ratio (CTR:MIN.50% at IF =5mA ,VCE =5V).
  • Isolation voltage between input and output (E357: Viso=3750 Vrms ).
  • Subminiature type (The volume is small than that of conventional DIP type by as far as 30%).
  • Mini-flat package EL357:1-channel type.
  • Pb free.
  • The product itself will remain within RoHS compliant version.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com EVERLIGHT ELETCRONICS CO., LTD Technical Data Sheet Photocoupler EL357 Features: • Current transfer ratio (CTR:MIN.50% at IF =5mA ,VCE =5V) • Isolation voltage between input and output (E357: Viso=3750 Vrms ) • Subminiature type (The volume is small than that of conventional DIP type by as far as 30%) • Mini-flat package EL357:1-channel type • Pb free • The product itself will remain within RoHS compliant version. Description The EL357 contains a gallium arsenic infrared emitting diode optically coupled to a phototransistor.