* Current transfer ratio
(CTR:MIN.50% at IF =5mA ,VCE =5V)
* Isolation voltage between input and output (E357: Viso=3750 Vrms )
* Subminiature type (The volu.
* Hybrid substrates that require high density mounting
* Programmable controllers
* System appliances, measu.
The EL357 contains a gallium arsenic infrared emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin SMD package
Applications
* Hybrid substrates that require high density mounting
* Programmable controllers
* S.
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