EL357
Features
:
- Current transfer ratio
(CTR:MIN.50% at IF =5m A ,VCE =5V)
- Isolation voltage between input and output (E357: Viso=3750 Vrms )
- Subminiature type (The volume is small than that of conventional DIP type by as far as 30%)
- Mini-flat package EL357:1-channel type
- Pb free
- The product itself will remain within Ro HS pliant version.
Description
The EL357 contains a gallium arsenic infrared emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin SMD package
Applications
- Hybrid substrates that require high density mounting
- Programmable controllers
- System appliances, measuring instruments
- Telemunication
- Electric home appliances, such as fan heaters, etc.
- Signal transmission between circuits of different potentials and impedances
Device Selection Guide Part No.
Chip Material IR
Ga As
Silicon
Everlight Electronics Co., Ltd. Device No：DPC-357-001 http:\.everlight. Prepared date：07-20-2005
Rev 2
Page: 1 of 10
Prepared by：Sam...
