Description
The EL357 contains a gallium arsenic infrared emitting diode optically coupled to a phototransistor.
Hybrid substrates that require high density mounting
Programmable controllers
System appliances, measuring instrument
Features
- Current transfer ratio
(CTR:MIN.50% at IF =5mA ,VCE =5V).
- Isolation voltage between input and output (E357: Viso=3750 Vrms ).
- Subminiature type (The volume is small than that of conventional DIP type by as far as 30%).
- Mini-flat package EL357:1-channel type.
- Pb free.
- The product itself will remain within RoHS compliant version.
EL357 Datasheet
